45/40nm Optimized Memory IP

Mobile Semiconductor’s silicon-proven embedded SRAM technology offers optimized memory solutions for both TSMC and GLOBALFOUNDRIES 40nm low-power processes. These single-port SRAM solutions are available in a range of architectures:

low voltage, low leakage, low power SRAM (LV)

ultra high speed SRAM (UHS)

high density SRAM (HD)

multi-megabit SRAM (MM)

Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.

Low voltage (LV) SRAM and ROM use high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconducotr's LV memories are ideal for the IoT market.

Single-port ultra-high speed (UHS) memories use low VT and standard VT devices to optimize the critical path and enhance performance while limiting static current.

Single-port high density (HD) memories use standard VT and high VT devices to optimize the critical path and enhance performance while limiting static current.

Single-port multi-megabit (MM) memories achieve the highest SRAM block densities with rectangular or L-shaped footprints for flexible SOC floorplanning.

TSMC 40nm LP

Mobile Semiconductor’s optimized TSMC 40nm LP-process embedded single-port SRAM solutions are offered in low voltage (LV), ultra high speed (UHS), high density (HD) and multi-megabit (MM) architectures.

To ensure high manufacturing yield, the Trailblaze™ software utilizes TSMC’s standard high density 6T bit cells and is consistent with TSMC’s Design for Manufacturing (DFM) guidelines for the 40nm LP process.

Mobile Semiconductor Optimized TSMC 40nm LP Architecture


Single-Port, Low Voltage
Single-Port, Ultra High Speed
Single-Port, High Density
Single-Port, Multi-Megabit

SMIC 40nm LL

Mobile Semiconductor offers an optimized SMIC 40nm LL-process embedded single-port SRAM solution in an ultra high speed (UHS) architecture.

In order to ensure high manufacturing yield, the Trailblaze™ software utilizes SMIC’s standard high density 6T bit cells and is consistent with SMIC’s Design for Manufacturing (DFM) guidelines for the 40nm LL process.

Mobile Semiconductor Optimized SMIC 40nm LL Architecture


Single-Port, Ultra High Speed

Trailblaze™ Compiler Name



SP-UHS-SM40LL

Custom Solutions

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