LFoundry Optimized Memory IP
Mobile Semiconductor’s silicon-proven embedded SRAM technology offers optimized LFoundry 150nm process SRAM solutions.
Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while reducing die sizes.
Single-port high density (HD) memories use low VT and standard VT devices to optimize the critical path and enhance performance while limiting static current.
LFoundry 150nm
Mobile Semiconductor offers an optimized LFoundry 150nm-process single-port high density (HD) embedded SRAM solution.
In order to ensure high manufacturing yield, the Trailblaze™ software utilizes LFoundry’s standard high-density 6T bit cells and is consistent with LFoundry’s Design for Manufacturing (DFM) guidelines for the 150nm process.
Mobile Semiconductor Optimized LFoundry 150nm Architecture
Single-Port, high density
Trailblaze™ Compiler Name
Custom Solutions
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